【摘要】 研究了一种新的红外瞬态退火技术,其工艺与常规的MOS工艺高度兼容.本文报道了这种红外瞬态退火的全注入 MOS工艺.用这种工艺制备的1μm沟长的 MOSFET 的电性能良好。同时也制备了 3μm沟长的 23级环振器与沟长为2 μm的 43级环振器,这些环振器每级门的延迟时间分别是1ns和0.6ns.更多还原

【Abstract】 A new infrared transient annealing technique has been developed.This techniqueseems well compatible with the conventional MOS technology.In this paper a full ionimplanted MOS technology using this annealing technique is described.By this newtechnology a 1 μm channel length MOSFET with satisfactorily electric characteristicshas been made.A 23 stage ring oscillator with 3μm channel length MOSFET and a43 stage ring oscillator with 2μm channel length have also been implemented in thisway.The delay time per gate are 1 ns and 0.6 ns respectively.更多还原