【摘要】 应用CF₄、C₄F₈、CF₃I等反应气体SiO₂、单晶硅进行刻蚀研究.研究了刻蚀速率与离子能量、束流密度、入射角的关系、所得 SiO₂对单晶硅刻蚀选择比分别为 9:1（CF₄）、15:1（C₄F₈）.刻蚀后,观察到表面有微量氟碳聚合物,但可用适当方法将氟碳沾污物予以消除.实验表明,C₄F₈反应气体是用于刻蚀SiO₂-Si 系统的较好气体,而CF₃I气体则否. 本文主要报道应用CF₄、C₄F₈在反应离子束刻蚀、镀膜装置（RIBC）中刻蚀SiO₂和Si的实验结果.更多还原

【Abstract】 The etching characteristics of SiO₂ and Si using CF₄,C₄F₈ and CF₃I gases are ex-amined.The dependence of an etch rate on ion energy,beam density and incidentangle has been investigated.The etch ratio of SiO₂ to Si reaches 9:1 for CF₄ and 15:1for C₄F₈.Thin polymer on the etched surface is observed after etching.Though thepolymer on the etched surface using C₄F₈ is more contaminated than that using CF₄.Itcan be eliminated easily by means of proper method.Experimental results show thatC₄F₈ gas is suitable for etching SiO₂/Si system,while CF₃I gas is not suitable for etch-ing SiO₂/Si system.更多还原