【摘要】 对GDa-Si_xC_1-x:H膜进行高温退火,当退火温度在550℃附近时晶化开始,随退火温度升高晶粒尺寸和晶化范围增大.晶化后的a-Si_xC_1-x:H膜光吸收系数、光学带隙和电导激活能下降,室温电导率增加.更多还原

【Abstract】 The experimental results show that when the annealing temperature is～55℃,the crystallization of a-Si_xC_1-x:H is initiated and the size of grain and the crystallizedregion increase with the raise of annealing temperature.The absorption coefficient,band gap and activation energy of these crystallized a-Si_xC_1-x:H films decrease whilethe dark conductivity increases.更多还原