【摘要】 用DLTS法结合C-V法,研究了不同能量的电子辐照（0.5MeV,1MeV,5MeV）在n型LPE GaAs层中产生的E₃、E₄、E₅和P₁、P₂、P₃等缺陷的引入率及其在400—550K范围内的等时退火行为.由引入率与电照能量的关系推断,P₂、P₃两缺陷是与两个以上原子位移有关的缺陷,而不是象E₃、E₄、E₅那样的单原子位移缺陷.5MeV电照下,E₃与E₅的引入率分别是0.5-MeV电照的13倍和9倍,而在这两个能量下,E₄的引入率之比却是55倍.这说明E₄不仅可以由电照直接引入,也可以由较大能量电照产生的某种多位移缺陷的分解而引入.更多还原

【Abstract】 Using DLTS method in conjunction with C-V method,the introduction rate andisochronal annealing behavior （from 400 K to 550 K） of E₃, E₄, E₅ and P₁, P₂, P₃ trapsinduced by 0.5 MeV,1 MeV and 5 MeV electron irradiation at room temperature in n-Type LPE GaAs layers have been studied.Judging from the dependence of introductionrates on irradiation energy,P₂ and P₃ traps are associated with the displacement of twoor more neighboring atoms and not with the displacement of one single atom like E₂, E₄and E₅ traps.It has been found that, when irradiation energy is changed from 0.5 MeVto 5 MeV,the introduction rates of E₃ and E₅ defects arc increased by 13 and 9 timesrespectively,while the introduction rate of E₄ trap is increased by a factor of 55.Thus,E₄ trap can be created not only by irradiation itself,but also by the dissociation of cer-tain complex defect,which is unstable at room temperature and created by the irradi-ation of higher energy.更多还原