【摘要】 本文报道用光声谱法在近红外波段研究硅单晶中³¹P⁺离子注入效应,得到了注入剂量为10¹²cm^-2-10¹⁵cm^-2范围内的光声信号幅值随注入剂量变化的关系.对于先经退火后进行离子注入的样品,其剂量低到 5×10¹¹cm^-2的离子注入效应也能被检测到.在1×10¹²-5 × 10¹³cm^-2低剂量范围内,光声信号明显地随注入剂量而增加.因此,光声谱法是研究离子注入造成的晶格损伤的有效手段,有希望发展成为硅中离子注入剂量的无接触、快速、非破坏性的测量方法.更多还原

【Abstract】 The effect on ²¹P⁺-implanted Si layers with photoacoustic spectroscopy in near-infrared wavelength range is reported.The correlations between the amplitude of pho-toacoustic signal and the implanted dose at levels from 1×10¹² to 1×10¹⁵cm^-2 are abta-ined and the information at implanted dose level as low as 5×10¹¹ cm^-2 is also effective-ly detected.The photoacoustie signal increases significantly with the implanted dose atlower levels (1×10¹² to 5×10¹³cm^-2).Therefore,the photoacoustic spectroscopy is aneffective method for studying damaged layers induced by ion implantation.On theother hand,it is considered that photoacoustic techniques have the prospect of becominga noncontact,rapid and nondestructive method for measuring implanted dose in siliconeven at low dose levels.更多还原