【摘要】 本文在800—1200℃的温度范围内,对LPCVD生长的未掺杂和重磷掺杂的多晶硅薄膜进行了干氧氧化特性的系统研究,并与轻掺杂和重磷掺杂的单晶硅的热氧化规律进行了比较.发现在900℃以下时,未掺杂多晶硅氧化规律不能完全用Deal-Grove模型描述,并存在着一个快速氧化的特征阶段.在这个阶段中多晶硅氧化速率比<111>单晶快,而重磷掺杂多晶硅却相反.掺杂、未掺杂,单晶、多晶间氧化规律的差异,在T=1200℃时,全部消失.本文讨论了产生上述现象的物理机理.更多还原

【Abstract】 The oxidation characteristics of both undoped and heavily phosphorus doped poly-Si films deposited by LPCVD have been systematically investigated in the temperaturerange of 800-1200℃ using dry O₂.It has been observed that the rule of oxidation forundoped poly-Si films can not be described by Deal-Grove model and that there is acharacteristic stage of rapid oxidation for poly-Si when the temperature is below 900℃.In this range,the oxidation rate of undoped poly-Si films is not only faster than <100>Si but also faster than <111> Si,while it is opposite in the case of heavily phosphorusdoped poly-Si films. The differences of oxidation characteristics between the single and poly-Si,and be-tween undoped and heavily doped poly-Si films disappear completely when the tempe-rature is 1200℃. The mechanisms for explaining the phenomena are discussed.更多还原