【摘要】 高剂量As注入Si的样品,经红外瞬态辐照退火能获得亚稳态载流子浓度(体浓度可高达6×10²⁰cm^-3),明显超过800℃时热平衡条件下As在Si中的固溶度值(1.9×10^1020cm-3.红外瞬态退火后再进行不同温度（室温-800℃）的后热处理,发现在处理温度390℃以上时,激活的杂质浓度随着时间加长而显著下降.本文报道上述失活现象的实验研究结果（霍耳效应测试和阳极氧化剥层技术、TEM、RBS随机谱、沟道谱和沟道产额角分布等实验结果）,通过对这些实验的综合分析,讨论了激活As原子的失活机理.更多还原

【Abstract】 By means of transient annealing with infrared irradiation metastable carrier con-centration (6×10²⁰cm^-3) which appreciably exceeds the value of equilibrium solid so-lubility of arsenic in silicon was obtained in high-dose arsenic-implanted silicon sam-pies.These samples were subjected to thermal post-treatments at different temperaturesranging from 20 to 800℃ and it was observed that above 390℃ the activated impurityconcentrations decrease with the increase of post-treatment time.The samples wereinvestigated experimentally by using Hall effect measurement,layer-removal techniqueby anodic oxidation and etching,TEM, RBS and channeling effect technique.In thispaper the detailed experimental results are shown and the possible mechanism of deac-tivation of activated arsenic atom is discussed.更多还原