【摘要】 <正> SiO₂中的陷阱在MOS短沟道器件的设计中是一重要限制,随着MOS集成电路集成度的提高,器件尺寸的缩小,必须考虑器件的热电子效应,SiO₂中陷阱的存在使热电子注入后器件性能发生变化,严重影响器件的稳定性、可靠性,另外电子束曝光、离子刻蚀、更多还原

【Abstract】 The electron trapping induced by electron beam irradiation in SiO₂ is investigatedand the photodepopulation speetrum,the photoinjection characteristics as well as theshift of flat-band voltage in response to photoinjection are measured by use of internalphotoemission technique.The depth of the trapping energy in the forbidden energygap is given,together with capture cross section,effective trap density and the depen-deuce of the capture cross section or the effective trap density on electric field.更多还原