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AlXGa1-XAs俄歇定量分析

QUANTITATIVE ANALYSIS OF AlX Ga1-XAs BY AES

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【作者】 高培德; 章纯思; 毕联训;

【Author】 Gao Pei-de Zhang Chun-si Bi Lian-xun Shanghai Institute of Metallurgy,Academia Sinica

【机构】 中国科学院上海冶金研究所; 中国科学院上海冶金研究所;

【摘要】 本文提供一种较精确的表面微区俄歇定量分析方法——组元素标样法,并在两个系统中对具有0.0<x<0.9的AlxGa1-xAs样品进行了俄歇定量检测。检测结果与电子探针和X射线双晶衍射的结果进行比较,发现二者相当一致,与电子探针和双晶衍射之平均相对偏离分别为7.3%和14.7%。与相对灵敏度因子法相比,分析精度可分别提高约1倍和3倍。

【Abstract】 A series of elemental standards approach, which can be applied to quantitative micro-area analysis by means of an Auger electron spectroscopy with rather good accuracy, is given.Using this approach samples of AlxGa1-x As With 0.0<x<0.9 were examined in two different system of AES. The results of examinations were compared with that obtained by electron microprobe and x-ray double crystal diffractometry. It is shown that they are in rather good accordance with one another. The relaitve deviation between AES and EPMA is 7.3%, and the relative deviation between AES and XDCD is 14.7%. Comparing to the results computed by “the relative elemental sensitivity factors approach” (See ф handbook), we have found that the accuracy of the quantitative analysis with the present approach is 1—3 times increased respectively.

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