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SI-GaAs光电导和光霍尔特性研究
AN INVESTIGATION OF PHOTOCONDUCTIVITY AND PHOTO-HALL EFFECT IN SI-GaAs
【摘要】 <正>研制了一套半绝缘半导体光电导率(PC)和光霍尔特性(PH)测试系统。应用该系统测量了多种类型SI-GaAs体单晶室温和77K的光电导特性及典型样品的室温光霍尔特性,对获得的谱线特征从Cr和O能级的角度作了分析讨论。 测试系统使用的光源波长范围是0.6~2μm,对应光子能量约为2.0~0.6eV,在此范围内,通过标定750W卤钨灯的光谱分布和改变灯源热丝电流的办法保证单色光为等
【Abstract】 A equipment for the measurements of photo-conductivity and photo-Hall effect, which provides a useful tool to investigate the influences of deep level impurities on the properties of semi-insulating materials, has been developed. The results at RT and 77 K by using this equipment on several different types of SI-GaAg crystals are reported. We also discuss some features of spectra obtained from these measurements. in view of the existence of Cr and O levels in crystals.
- 【文献出处】 应用科学学报 ,Journal of Applied Sciences , 编辑部邮箱 ,1984年03期
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