【摘要】 用离子微探针测量Si 中注入B、As 杂质的浓度分布,发现测量误差很严重,原因在于质量干扰和J.C.C.Tsai 转换公式[1]有误。通用的离子探针不能将要测的二次离子和质量干扰离子分开,但根据本文提出的“实测二次离子计数分布模式”可将两者的离子计数分开。为了消除质量干扰离子的影响,导出两个对J.C.C.Tsai 公式的修正公式.据此得到与实际分布相符的注入杂质浓度分布,提高了仪器的测量准确度和监测极限。更多还原

【Abstract】 The serious measurement errors were found in an ion microprobefor testing the in-depth distributions of concentration of implanted B and As insilicon.The reasons were investigated and demonstrated that they come frommass interference and some mistakes of J.C.C.Tsai formulas.In general,theion microprobe can not separate the secondary ions to measure from the massinterference ions,but the counts of two kinds of ions can be separated by“thedis tzibution model of actual measured secondary ion counts”presented in thisarticle.The modified formulas of J.C.C.Tsai ones were deduced for subtract-ing the mass interference ions.The analytical results of the profiles of implan_ted impurities by new formulas agree with actual profiles very well.Thetesting accuracy is improved obviously.更多还原