【摘要】 本文阐述以Si₃N₄/SiO₂为绝缘膜.用4.4二叔丁基二苯并-30-王冠-10作为活性物质的钾离子敏感半导体探头的研制成功,并对其特性及钾离子敏感性进行了研究。实验结果说明,它具有理想的PK灵敏度和良好的稳定性.应用“偶极子模型”,从理论上分析钾离子敏感机理.更多还原

【Abstract】 This paper reports on the pobaSsiun ion sensitive semiconductor device which is the insulator membranes of Si₃N₄/SiO₂ and uses Crown ether as active material. The test result shows that this device has many advantages. It is small in size, nice in stability and highly sensitive. In addition, the paper analyses the sensitive mechanism of the device by using so called "dipole model".更多还原