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磁场中窄禁带半导体的高阶光学性质(Ⅱ)
ON THE HIGH ORDER OPTICAL PROPERTIES OF NARROW-GAP SEMICONDUCTOR IN A MAGNETIC FIELD (Ⅱ)
【摘要】 本文讨论了在磁场中,窄禁带半导体在双光子吸收线附近的三阶非线性,并计算了在带边的几个非线性Faraday旋转峰和Voigt相移峰的位置和相对强度。
【Abstract】 In this paper, the third order optical nonlinearity of narrow-gap semiconductor near two-photon resonance in a magnetic field is discussed. The theoretical positions and relative strengths of the peaks of nonlinear Faraday rotation and Voigt phase shift near the gap edge are obtained.
- 【文献出处】 物理学报 ,Acta Physica Sinica , 编辑部邮箱 ,1984年12期
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