【摘要】 本文应用X射线透射截面形貌技术研究了氢气区熔硅单晶中氢致缺陷与热处理温度的关系。根据早期氢致缺陷的X射线形貌图衍衬分析,指出氢沉淀周围晶格受到压缩性应变,并简单阐述了硅氢键断裂与氢致缺陷形成过程。更多还原

【Abstract】 The relationship between the annealing temperatures and the hydrogen-induced defects in floating zone silicon grown in hydrogen atmosphere has been investigated by X-ray section topography. According to the analysis of X-ray topographic patterns of the early stage hydrogen-induced defects, it is found that the lattices around hydrogen precipitates are under compression. The processes of the breakdown of silicon-hydrogen bonds and the formation of hydrogen-induced defects are discussed briefly.更多还原