【摘要】 本文研究了1.8—4.2K下离子注N,注Zn GaAs_1-xP_x样品的光致发光行为。实验结果表明由N-Zn跃迁完全转变到N束缚激子复合的x值依赖N,Zn的浓度。 利用Campbell局域化模型计算了N-Zn跃迁与N束缚激子复合的几率比。这一几率比是组分x和N-Zn浓度的函数。 在1.8K,在同一样品上我们清晰地观测到对应N-Zn跃迁与N束缚激子复合的光谱。更多还原

【Abstract】 The photoluminescent behavior of N+ and Zn+ implanted GaAs1-x Px has been investigated at 4.2 K. The experimental results show that the alloy composition x, at which N-Zn transition completely becomes N bound excitonic recombination, depends on the nitrogen and zinc impurity concentration.Using Campbell localized model, we calculated the probability ratio of N-Zn transition to N bound excitonic recombination as a function of composition and N, Zn impurity concentration.At 1.8 K, we have clearly observed the typical spectra of N-Zn transition and N bound excitonic recombination in the same sample.更多还原