【摘要】 应用光电化学方法,根据Butler-Gartner模型测定了n-InP半导体材料的少子扩散长度、吸收系数、跃迁模式和禁带宽度,并将结果与文献上用物理方法测得的数据进行了比较。更多还原

【Abstract】 In the present work,several physical parameters of semiconductor n-In P are determinated by the photoelectrochemical method using the Butler-Gartner model.The diffusion length of holes Lf is 1.4×10-5cm,the band gap Eg=1.305 e V,the optical transition is in the direct mode and the absorption coefficient α against the wavelength A is obtained.All of the above results are consistent with those obtained by physical methods in the literatures.更多还原