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Ga1-xAlxAs-GaAs异质面太阳电池的电子和质子辐照以及退火研究

ELECTRON AND PROTON IRRADIATION AND THERMAL ANNEALING IN Ga1-xAl_xA_s/AaA_s HETEROFACE SOLAR CELL

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【作者】 隋兆文陈芬扣管丽民

【Author】 Sui Zhao-wen Chen Fen-kou Guan Li-ming (Shanghai Institute of Metallurgy,Chinese Academy of Sciences)

【机构】 中国科学院上海冶金研究所中国科学院上海冶金研究所

【摘要】 本文报道了液相外延Ga1-xAlxAs-GaAs异质面太阳电池的电子和质子辐照以及退火试验结果。辐照电子能量为1MeV,积分通量为1012—1015e/cm2;质子辐照能量为7.8MeV,积分通量为108—1012p/cm2。测定了辐照前后电池的电特性和光谱响应曲线。观察到结深与辐照损伤的明显关系。电子辐照的临界通量(?)c>1×1015e/cm2,质子辐照临界通量(?)c>1.02×1012p/cm2。经积分通量1×1015e/cm2的辐照,再在真空200℃进行热退火20小时后,短路电流得到全部恢复,输出功率恢复至原来的80%。

【Abstract】 In the paper the results are given of an investigation on the performance degradation of GaAlAs/GaAs heteroface structure solar cells subjected to electron and proton irradiation.The experiment was restricted to energy of 1 MeV and 7.8 MeV for electron and proton respectively and covered the fluence range up to 1015e/cm2 and 1012p/cm2.The measurements of I-V characteristics predicted that the critical fluences were larger than 1×1015 e/cm2 for 1 MeV electron and 1 X 1012 p/cm2 for 7.8 MeV proton respectively.From the spectral response measurements,it can be shown that the extent of damage depends on the junction depth.Thermal annealing was undertaken to recover the performance degradation of cells.After annealing in vaccum at 200℃ for 20 h,100% short circuit current and 80% output power can be recoved from the damage resulling from irradiation by 1×1015 e/cm2 electron flunce.

  • 【文献出处】 太阳能学报 ,Acta Energiae Solaris Sinica , 编辑部邮箱 ,1984年01期
  • 【被引频次】5
  • 【下载频次】63
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