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p型InP单晶的近红外光吸收
Near Infrared Absorption in p-Inp Single Crystals
【摘要】 讨论了单晶样品光吸收系数的实验测定技术和计算方法。研究了掺 Zn的 p 型 InP 单晶的近红外吸收系数与波长、载流子浓度及其霍耳迁移率的关系,得出了它们之间的经验关系。讨论了在载流子浓度为1×1017~5×1018cm-3范围内对自由载流子吸收的贡献。
【Abstract】 The free-carrier absorption constants of Zn-doped InP singlecrystals have been measured at the near-infrared wavelengths.It was observedthat the absorption was controlled mainly by the optic-phonon scattering asthe carrier concentration ranged from 1017cm-3 to 5×1018cm3.The empirical rela-tionship between the abborption constants,carrier concentration and the mobi-lty has been established.
- 【文献出处】 人工晶体 ,Journal of Synthetic Crystals , 编辑部邮箱 ,1984年03期
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