THEORY OF ENDOR AND ESR SPECTRA OF DEEP IMPURITY LEVELS IN Si, GaP AND GaAs

【摘要】 <正> The isotropic and anisotropic parts of deep impurity wavefunctions are predicted as func-tions of energy E for substitutional, A₁-symmetric, sp³-bonded deep levels in Si, GaP and GaAs.The wavefunctions of deep levels are host-like and virtually independent of impurity respon-sible for the deep level. The difficult problem of determining the defect potential is circum-vented by expressing the wavefunction as function of deep level energy E alone. Thus theonly inputs to the theory are band structure of the host and the assumption that the defectpotential in a suitable basis is site-dingonal.Our theoretical results are in good agreement with almost all known ENDOR and ESRdata and previous qualitative theoretical predictions.更多还原

【Abstract】 The isotropic and anisotropic parts of deep impurity wavefunctions are predicted as func-tions of energy E for substitutional, A₁-symmetric, sp³-bonded deep levels in Si, GaP and GaAs.The wavefunctions of deep levels are host-like and virtually independent of impurity respon-sible for the deep level. The difficult problem of determining the defect potential is circum-vented by expressing the wavefunction as function of deep level energy E alone. Thus theonly inputs to the theory are band structure of the host and the assumption that the defectpotential in a suitable basis is site-dingonal.Our theoretical results are in good agreement with almost all known ENDOR and ESRdata and previous qualitative theoretical predictions.更多还原