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钾离子敏感半导体器件的研制

DEVELOPMENT OF THE POTASSUM ION SENSITIVE SEMICONDUCTOR DEVICE

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【作者】 黄强方培生

【Author】 HUANG QIANG;FANG PEI-SHENG Xi’an Jiaotong University

【机构】 西安交通大学西安交通大学

【摘要】 <正> 离子敏感半导体器件发展很快,已成为离子选择性电极的一个重要分支。我们用Al2O3膜作绝缘栅,并以二苯并-18-冠醚-6(1)和二叔丁基苯并-30-冠醚-10(2)为活性物质制成两种敏感器件。对这两种敏感器件的特性进行测试,其线性响应范围均为1×10-4~1M氯化钾,响应斜率均为55mV/pK,但对钠离子的电位选择性系数分别为1.5×10-2和3.16×10-3。选用Ag-AgCl电极为参比电极与敏感器件封装在一起,这样就充分发挥了敏感器件体积小和牢固的特点。

【Abstract】 The behaviours of the semiconductor device with two crown ethers coated onAl2O3 gate surface were studied. Using the Ag-AgCl electrode as reference one canseal the reference electrode together with the semiconductor device. So it is possibleto reduce the size of the device, and it will be easier and more convenient to operate. Two kinds of devices exhibited a linear response to potassium ion within theconcentration range of 1×10-4~1MKCl. Their calibration plots had a slope of55mV per activity decade at 25℃. Potentiometric selectivity coeffcients of K+ toNa+ for the two kinds of devices were 1.5×10-2 (Crown 1) and 3.16×10-3 (Crown2) respectively.

  • 【文献出处】 化学学报 ,Acta Chimica Sinica , 编辑部邮箱 ,1984年02期
  • 【被引频次】22
  • 【下载频次】39
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