【摘要】 本文报道用电子束感生电压方法观察碲镉汞光二极管光敏区响应分布,直接显示p-n结耗尽区位置的实验结果。在p型碲镉汞上制成了肖特基势垒二极管。用它测量了碲镉汞的少数载流子扩散长度。更多还原

【Abstract】 Experimental results of observing photodiodes responsivity profile and p-n junctiondepletion region by electron-beam induced voltage technique are presented. Measure-ments of minority-carrier diffusion length have been made on Schottky barrier diodesformed on p-type HgCdTe.更多还原