节点文献
SiCl4-GeCl4-O2系统的多相平衡和对于掺杂SiO2的MCVD过程锗分布关系
HETEROGENEOUS EQUILIBRIA IN THE SYSTEM SiCl4-GeCl4-O2 AND THEIR RELATION TO Ge-DISTRIBUTION IN DOPED SiO2 MCVD PROCESS
【摘要】 本文叙述SiCl1-GeCl4-O2系统多相平衡的计算结果。作出GeO2-SiO2相图和含Ge分子的浓度分布图,并讨论了MCVD掺杂SiO2光纤的锗产率。
【Abstract】 This paper deals with the results of computer calculation of heterogeneous equilibria in the system SiCl4-GeCl4-O2. Phase diagram of binary system GeO2-SiO2 and plots of the concentration of Ge-containing species versus temperature are constructed. The approaches to increasing the yield of germanium in the doped silica fiber of MCVD process are therefrom discussed.
- 【文献出处】 硅酸盐学报 ,Journal of The Chinese Ceramic Society , 编辑部邮箱 ,1984年04期
- 【被引频次】2
- 【下载频次】55