【摘要】 本文给出体样品As-Te、As-Te-Ge和（As₂Te₃）_1-xNi_x 硫系玻璃半导体温差电动势率和直流电导率与温度的关系。实验结果表明:在相当宽的温度范围内,电导率激活能E_σ比激活能E_s（从温差电动势率与温度关系曲线上求出的）大。E_σ和E_s的差在0.15～0.2eV之间。这个结果表明了温差电动势率比电导率有弱的温度依赖关系。电导机理可以用延展态和局域态同时输运的双通道模型来解释。在低温区,观察到费米能级附近跳跃导电。对于掺Ni的（As₂Te₃）_1-xNi_x玻璃,实验表明Ni对电导率影响较小,而温差电动势率随Ni含量的增大而减小。更多还原

【Abstract】 Thermoelectric power and DC conductivity of bulk As-Te,As-Te-Ge and （As₂Te₃）_1-xNi_xchalcogenide glasses as function of temperature have been given in this paper.The experi-mental results show that over a wide temperature range, the conductivity activationenergy E_σ is larger than the activation energy E_s（from plot of thermoelectric power ver-sus reciprocal temperature）,and the difference between E_σ and E_s is of the order of 0.15～0.2 eV.The results indicate weaker temperature dependence of thermoelectric power ascompared with conductivity.The conduction mechanism may be explained by a two-chan-nel model with transport simultaneously in both extended and band-tail-localizedstates. Hopping conduction near the Fermi energy has been observed in low temperaturerange. For bulk （As₂Te₃）_1-xNi_x,experimental results show that effects of Ni on condu-ctivity are smaller and thermoelectric power decreases with increase of Ni content.更多还原