【摘要】 本文报道分子束外延生长GaAs-Ga_xAl_1-xAs双异质结激光器的生长条件.其中包括低温生长的温度-时间循环,欧姆接触电极层的原位生长以及生长后的退火等程序.实验表明,生长过程中采用高纯度的源材料,氮化硼的泻流盒以及生长系统中的低温泵等对降低器件的阈电流密度,改善激光器的光电性能起到重要作用.更多还原

【Abstract】 The growth conditions for MBE-grown GaAs-GaxAl1-xAs DH lasers are reported which include the temperature-time cycles with a lower growth temperature, in-situ growth of ohmic contact electrode layer, and an annealing process after growth. The experiments indicate that the use of source materials with high purity, BN effusion cells, and the cryopump in the system play important roles in reducing the threshold current density of the lasers and improving their optical and electrical performance.更多还原