【摘要】 本文叙述了一种新的C-G-V法,用来测量FET薄层材料中的杂质和迁移率分布。该法的一个附加优点是对材料的非破坏性。进行了一些初步实验,结果与霍尔测量的数据符合良好。更多还原

【Abstract】 A new C-G-V technique is described to determine simultaneously the doping-profile and mobility-profile for FET thin layers. An addtional feature of this technique is non-destructive. Preliminary experiments are carried out with the results in good agreement with the Hall-measurement data.更多还原