【摘要】 按照一定的掺杂比例制备了一种双掺硅单晶。单晶片经热处理后形成的P-N结具有结深浅、均匀、杂质浓度分布不同于扩散结和离子注入结等特点。本工作对P-N结形成的规律进行了理论和实验研究,结果十分吻合。对P-N结的基本特性和光学性能的研究说明:这种双掺硅形成的P-N结有可能用于制作光电器件、集成电路、太阳能电池和某些特殊器件。结果还有助于对硅表面反型的机构及界面问题的进一步认识。这项研究工作还提供了一种新的获取P-N结的工艺方法,这种方法在制造某些器件和集成电路时,工艺将大为简化。更多还原

【Abstract】 ual-dopant Si is fabricated with specified doping proportions. Its PN junction, formed by heat treatment of single crystal wafers, is characterized with shallow junction depth, unifomity, and doping profile different from those in diffusion and ion implantation. Theoretical and experimental investigations are conducted for the formation of PN junction and are in very good agreement. Study on the fundamental characteristics and optical performance of the junction shows the possibility of using this technique to make opto-electrical devices, ICs, solar cells, and other special devices. The results are also helpful for the understanding of mechanisms concerning surface inversion aad interface problem in Si devices. This investigation offers a novel technique to obtain PN junctions which would greatly simplify the fabrication technology for certain devices and ICs,更多还原