节点文献
硅上矩形沟槽的获得和JFET漏压的改善
An Improvement on Drain Voltage of VWG JFET
【摘要】 用（KOH+H2O2+NH4F）混合腐蚀剂对[110]晶向的硅片进行腐蚀,可以获得截面为矩形的沟槽。本文介绍了取得完美矩形的沟糟和改善沟槽击穿电压的实验结果。把这种沟槽用于垂直沟道效应晶体管中,漏栅击穿电压可达500V,器件的开关时间为10～20ns。
【Abstract】 Vertically walled groove (VWG) has been achieved using (KOH+H2O2+NH4F etchant at [110] oriented Si. Experimental results with perfect VWG and improved Gate BV are described. VWG has been used in the fabrication of vertical channel J-FETs with Gate-Drain BV up to 500V and switching time of 10-20ns.
- 【文献出处】 固体电子学研究与进展 ,Research & Progress of Solid State Electronics , 编辑部邮箱 ,1984年03期
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