【摘要】 <正> (一)引言 非晶硅少子扩散长度对非晶硅太阳电池的性能有重要影响,它是表征非晶硅材料质量的重要参数。最近Dresner和Moore分别用表面光电压法(SPV法)测量非晶硅少于扩散长度获得成功。但前者需要超高真空系统,样品表面要经过溅射和退火,后者使用非晶硅液体肖特基势垒,装置较烦。我们试用顶层淀积了金属镍的非晶硅薄膜作样品,利用镍和非晶硅膜构成的金属肖特基势垒进行表面光电压测量,获得成功。这样更多还原

【Abstract】 The results of a study in the diffusion length of holes in a-Si:H by measuring the sur-face photovoltage of the metal (Ni) Schottky barrier is reported. The change of field-assis-ted hole transport with bias light was observed. It is believed that measurement of diffusion length by this method may become a useful way of detecting and improving the quality of a-Si:H.更多还原