【摘要】 我们利用直流吸气溅射技术制备了一系列A—15 V₃Si样品,分别测量了它们的上临界场初始斜率dH_c2（T）/dT|_T→Tc和它们的剩余电阻率ρT_c与超导转变温度T_c的关系。实验结果表明,（dH_c2I（T））/dT|_T→Tc先随着ρT_c的增大（T_c的减小）而增大,对于ρT_c=65μΩ·cm（T_c=12K）的样品具有极大的（dH_c2I（T））/dT|_T→Tc,然后（dH_c2I（T））/dT|_T→Tc随着ρT_c的增大（T_c的减小）反而减小, 我们也观察到临界温度附近的临界场H_c2（T）-T曲线的弯曲现象,对于理想的样品发生正的弯曲;对于无序化程度高的样品发生负的弯曲。本文对实验结果进行了讨论。更多还原

【Abstract】 The upper critical field slop, , has been measured and its relations with theresidual resistivity ρTc and the transition temperature Tc for a series of D-C sputtered V3Si films have been determined.From the experimental results, the critical field slope increased initially withthe increase of the residual resistivity (with the decrease of the sample’s Tc) and reached a maximun for a sample with ρTc=65μQ. cm(Tc=12.0.K), then decreased with the increase of ρTc (the decrease of Tc).We have also observed the fact that the graph of Hc2(T) vs. T near Tc exhibited positive curvature for more ordered samples and negative curvature for highly disordered samples.Some discusions on the results are presented here.更多还原