【摘要】 采用射频反应溅射的方法,通过改变氩气和氮气的比例,并在不同的衬底温度下生长了NbN薄膜。测量了NbN膜的超导转变温度、电阻率和电阻比。膜的T_c一般是13—15K。对膜作了X射线分析和XPS谱分析。用NbN膜制成了超导微桥和厚差桥。更多还原

【Abstract】 RF reactively of sputtred NbN films were fabricated by changing the ratio of argon to nittogen and using a range of substrate temperatures. The transition temperature Tc, electrical resistivity and resistivity ratio of NbN films were measured. Tc was usually between 13K and 15K, and sometimes up to 15.2K. X-ray analysis and XPS studies on NbN films were made and superconducting microbridges and VTBS of NbN were fabricated.更多还原