【摘要】 <正> 电子辐照硅功率器件是七十年代初发展起来的新工艺,它利用加速器产生高能电子流辐照硅功率器件,使硅材料晶格中的点阵原予发生位移,造成简单的品格空位和间隙原子。这些空位和问隙原子要和硅中的其它杂质、空位相互作用,组成缺陷络合物,形成了深能级的复合中心,如氧宅位对、磷空位对、双空位对等,以控制少子寿命.为了克服目更多还原

【Abstract】 Silicon power devices are irradiated by high energy electron beam which is produced by BF-5 linear electron accelerator（energy 3-5 MeV,beam current 200μA,scanning width 66cm）.Recombination centres of deep energy levels controlling the life-time of minority carrier are formed in power devices. The relations between electron fluence,electron fluence rate and life-time of minority carrier have been studied.The influence of electron energy on radiation damage coefficient and V_F-t_off trade-off curve has also been stu- died.Except for this,the mechanisms to control life-time are investigated.更多还原