【摘要】 利用分子束外延技术制备了选择性掺杂的GaAs/N-AlGaAs异质结,22K时,该结构的迁移率达到 223,000cm²/V.s,相应的薄层电子浓度为 5.7 × 10¹¹cm^-2.在低温强磁场下,观察到异质结电子系统的二维SdH振荡特性和量子化Hall效应.更多还原

【Abstract】 A selectively doped GaA₃/N-AlGaA₂ heterostructure with an electron mobility ashigh as 223,000 cm²/V.s and a sheet carrier concentration of 5.7×10¹¹cm^-2 at 22 K hasbeen grown by molecular beam epitaxy （MBE）.SdH oscillation and quantized Hall resi-stance of two-dimensional electron gas in the heterostructure have been observed underhigh magnetic field at low temperature.更多还原