【摘要】 在1.3μm InGaAsP/lnP DH激光器发射谱中,我们观测到 0.95μm的短波发射带.实验分析表明这一发射带不是由结偏位引起,也不是有源区中导带到自旋轨道分裂价带的复合发光.当温度从200K到300K变化时,这发光带的峰值随温度的变化与经过自吸收的InP侧向光荧光谱一致.此发光帝的强度与有源区内载流子浓度三次方成正比.这说明此发光带是有源区内俄歇复合产生的高能载流子越过异质结势垒到InP 限制层中的复合发光.更多还原

【Abstract】 A 950nm emission band from 1.3μm InGaAsP/InP DH laser has been observedThe experimental results show that this emission is neither due to remote InP p-n junc-tion nor to the recombination from conduction band to spin orbit-off valence band.Con-sidering the selfabsorption in InP in edge emission,the peak wavelength of the 950 nmemission is qualitatively consistent with the peak wavelength of the lateral photolumin-escence spectra of InP.The integrated intensity of the 950 nm emission strongly de-pends on the injected carrier concentration n in active layer (I∞n~3). This experimentalresult can be well explained if eonsidering the injected carrier overflow from InGaAsPto InP confinement layer by energetic carrier created by Auger reconbination in InGa-AsP active layer.更多还原