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低压化学蒸汽淀积的三维计算机模拟

Three Dimensional Computer Simulation of Low Pressure Chemical Vapor Deposition

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【作者】 王季陶; 张世理; 王焕杰; 连美华;

【Author】 Wang Jitao/Fudan UniversityZhang Shili/Fudan UniversityWang Huangjie/Fudan UniversityLian Meihua/Fudan University

【机构】 复旦大学; 复旦大学;

【摘要】 本文在一维LPCVD计算机模拟算式的基础上,考虑到反应管中,径向浓度不均匀的影响,进一步提出三维LPCVD计算机模拟算式,以便同时解决片内和片间均匀性问题.在形式上,整个三维模拟算式可以分解为片内和片间两个独立的部分,但二者是相互影响的.计算结果同一些实验结果具有相同的结论.在三维LPCVD计算机模拟的指导下,我们在研制LPCVD工艺和设备中取得了片内、片间均匀性和批间重复性都极为良好的结果.

【Abstract】 Based on one-dimensional LPCVD computer simulation formulae reported previous-ly,three-dimensional LPCVD computer simulation formula is reported so as to calcula-te within-wafer and wafer-to-wafer uniformity simultaneously.In form, this new simu-lation formula can be divided into two parts:the solution in the part of within-waferuniformity can be obtained by solving a diffusion-transference problem,while the partof wafer-to-wafer uniformity can be simulated just by one-dimensional LPCVD com-puter simulation formulae in which only the deposition areas are modified.Success hasbeen achieved in the research of LPCVD equipment and technology by using this three-dimensional LPCVD computer simulation.

  • 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1984年06期
  • 【被引频次】6
  • 【下载频次】27
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