【摘要】 本文分析了用俄歇电子能谱仪结合氩离子溅射测量绝缘衬底与半导体外延层之间的界面时遇到的样品带电效应并提出了与此有关的在实验中获得正确信息的方法,在此基础上得到了良好的俄歇剖面图.研究了外延温度,生长速率,退火温度对界面层宽度的影响.根据绝缘衬底上硅异质外延过程中成核与生长的特征讨论了实验的结果。比较了蓝宝石-硅与尖晶石-硅的界面宽度,认为它们的差异可归之于衬底与外延硅之间的结晶学关系对成核密度的影响。更多还原

【Abstract】 Sapphire-silicon and spinel-silicon interfaces have been studied using AES associat-ed with Ar~+ sputtering.The origins of the charging effect observed in the measure-ments of insulating substrates and semiconductor epitaxial layers have been analysed.The appropriate method of obtaining correct information has been proposed with fairlysatisfying AES profiles obtained on this basis. The effects of epitaxial temperature,growth rate and annealing temperature on theinterfacial width have been studied.The experimental results have been discussed ac-cording to the features of nucleation and growth during the silicon heteroepitaxial pro-cess on insulating substrates.The difference between the interfacial widths of sapphire-silicon and spinel-silicon may be attributed to the crystallography relations between sub-strates and epitaxial silicon and their effects on the nucleation densities.更多还原