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聚乙炔链中极化子和孤子对形成速率的计算

Calculation of Decay Rate for Polaron and Soliton Pair in Transpolyacetylene

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【作者】 顾宗权; 王永良;

【Author】 Gu Zhongquan/Institute of Semiconductors, Academia SinicaWang Yongliang/Institute of Semiconductors, Academia Sinica

【机构】 中国科学院半导体研究所; 中国科学院半导体研究所;

【摘要】 根据苏肇冰和于渌提出的聚乙炔中极化子及孤子对的形成理论,本文具体计算了注入电子和电子-空穴对通过多声子跃迁形成电子极化子和孤子对的形成速率.我们计算的特点是严格考虑了多电子跃迁中的非正交性问题. 计算结果表明一个注入电子在不小于 4.7 ×10-15秒的时间内弛豫形成电子极化子,很接近Schrieffer等人的计算结果.而电子-空穴对在大于 1×10-15秒的时间内形成孤子对,与有关实验相符. 对光生中性孤子对及带电孤子对的俘获截面的比较表明,生成中性孤子对的跃迁是禁戒的,这与苏、于所讨论的选择定则是一致的.

【Abstract】 Using the multiphonon transition theory as applied to the problem of soliton pairand polaron generation in polyacetylene by Su and Yu,we have calculated the decayrate of an injected electron into a polaron and an electron-hole pair into a soliton pair.The main distinguishing feature of our calculation is that the nonorthogonality of theelectronic wave functions in the N-electron transition is strictly taken into account. It was shown that the nonradiative decay time of an injected electron into a polaronby lattice relaxation is not less than 4.7×10-15s.which is comparable with the numericalresult obtained by Schrieffer et al.,and that of an electron-hole pair into a soliton-pairis more than 1×10-15s, which is in agreement with the experimental results. The calculation of cross section for the soliton-pair photoproduction shows that thetransition for neutral soliton-pair photoproduction is forbidden that is in agreementwith the selection rule discussed by Su and Yu.

  • 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1984年06期
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