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掺氧多晶硅薄膜的组分分析
Analysis of the Composition of Oxygen-Doped Polycrystalline Silicon
【摘要】 本文用红外吸收谱和统计理论分析低压CVD生长的半绝缘多晶硅(SIPOS)薄膜的组分.SIPOS 薄膜包含SiO 和SiO2以及它们之间的硅氧化物.而且随着膜中氧浓度的增加,其SiO2的比例也增加.
【Abstract】 The composition of oxygen doped semi-insulating polycrystalline silicon filmsgrown by LPCVD method are analyzed with the infrared absorption spectra and thestatistical theory.These films consist of SiO, SiO2 and an oxide intermediate betweenthe two.The SiO2 composition in SIPOS films increases as the oxygen concentratiorin the films increases.
- 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1984年05期
- 【被引频次】2
- 【下载频次】49