【摘要】 采用AsC_T3-Ga-Ar系统外延生长 GaAs,获得了77K电子迁移率为 2.05 × 10³cm²/V·s和峰值迁移率高达 3.78 ×10⁵cm²/V·s（在 35K）的结果.为了比较,用同一批源材料分别在Ar气和N₂气系统中外延生长GaAs,井作了霍尔测量.结果表明,Ar气系统较有利于制备高纯GaAs,尤其是生长厚度较薄的外延层.光致发光研究结果揭示了Ar气系统中生长未掺杂外延层的主要残留受主杂质是碳.更多还原

【Abstract】 High purity VPE-GaAs was prepared with the AsCl₃-Ga-Ar system.The epilayerwith μ_{77 K}=2.05×10cm²/V.s was abtained and the peak mobility was as high as 3.78×10⁵ cm²/V.s at 35 K.For the sake of comparison GaAs was grown in Ar system andalso in N₂ system with the same batch of start material.Hall measurements showedthat Ar system is more suitable for the preparation of high purity GaAs, especiallyfor the growth of thinner epilayers.Photoluminescence measurements showed that thedominant residual acceptor impurity is carbon.更多还原