Dynamical Analysis of the C-t Process in MIS Structure and a Method for Measuring the Spatial Distribution of the Generation Lifetimes of Minority Carriers in Semiconductors
The C-t process in pulse biased MIS structure is dynamically analysed.The re-suits show that the effect of interface states on C-t process is generally not negligibleonly in the depleting process of the interface and the inversion process of semicon-ductor surface,and that the non-linearity of the Zerbst plot of the C-t process mainlyarise from the inhomogeneous spatial distribution of the generation lifetimes of theminority carriers in the semiconductor surface layer when the semiconductor surfaceis strong...
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