【摘要】 本文对MIS结构的C-t过程作了动力学分析.结果表明:一般情况下,界面态只在界面的耗尽和半导体表面反型的过程中对C-t特性有不可忽视的影响;当半导体表面强反型以后,C-t过程的Zerbst图的非线性行为主要是半导体表面层中少子产生寿命的不均匀空间分布造成的.文中首次提出利用脉冲偏置C-t过程测量半导体表面层中少子产生寿命空间分布的方法,并以II型硅MOS电容器为例作了测量.更多还原

【Abstract】 The C-t process in pulse biased MIS structure is dynamically analysed.The re-suits show that the effect of interface states on C-t process is generally not negligibleonly in the depleting process of the interface and the inversion process of semicon-ductor surface,and that the non-linearity of the Zerbst plot of the C-t process mainlyarise from the inhomogeneous spatial distribution of the generation lifetimes of theminority carriers in the semiconductor surface layer when the semiconductor surfaceis strong in inversion.A method for measuring this inhomogeneous spatial distribu-tion is suggested for the first time by using the C-t process in pulse biased MISstructure.An example has been given for an n-type silicon MOS capacitor.更多还原