【摘要】 本文研究了热处理对高压液封法生长的掺Sn的、掺s的和未掺杂的磷化铟的光致发光光谱的影响.掺Sn的InP在热处理温度高于500℃时出现了1.36eV 发光峰,同样热处理条件下,未掺杂的与掺S的InP材料不存在这个发光峰.研究表明,热处理掺Sn的InP中1.36eV发光峰所对应的发光中心很可能是Sn和V_p构成的复合体.更多还原

【Abstract】 The influences of thermal annealing on photoluminescence of LEC grown InPhave been studied.As the annealing temperature of Sn-doped InP exceeds 500℃, aphotoluminescence peak locating at 1.36 eV appears.With the same thermal annealingconditions,this peak does not appear in undoped and S-doped InP samples.Thestudy shows that in all probability the photoluminescence center corresponding to 1.36eV peak is the complexes composed of Sn and P vacancy.更多还原