【摘要】 本文提出一个利用电容瞬态技术直接由俘获过程测量不同能量位置界面态俘获截面的新方法,并用它测量了n型Si-SiO₂界面态对电子的俘获率和俘获截面.结果表明界面态的电子俘获截面强烈地依赖于界面态的能量位置,即除了导带之下0.53到0.38cV能量区间之外,俘获截面随着能量向导带底方向变化几乎呈指数地衰减.本文还提出,在界面态的俘获截面与能量有关的情况下,将界面态发射载流子的DLTS 谱返原成界面态密度随能量分布的方法,并利用它分析了原子氢和分子氢对n型Si-SiO₂界面态的退火效果.更多还原

【Abstract】 A new method for measuring the capture cross sections of interface states is sug-gested by using transient capacitance technique,and this method has been used tomeasure the eletron capture rates and cross sections of the interface states at n-typeSi-SiO₂ interface.The results show that the electron capture cross section stronglydepends on the energy,i.e.σ_n almost exponentially decreases with energy towards theedge of the conduction band except for the interval of 0.53 to 0.38 eV from the con-duction band.A method for interpreting the DLTS emission spectra of the carrierstrapped at interface states into the energy distribution of the densities of interfacestates is also suggested in the case that the capture cross section depends on the energy,and this method has been used to analyse the results of the interface states at n-typeSi-SiO₂ interface annealed by atomic hydrogen and molecular hydrogen.更多还原