【摘要】 用三种钯源对p~+nn~+和n~+pp~+硅二极管进行了扩散掺杂,井用深能级电容瞬态谱仪(DLTS)对它们作了测量.在适当的工艺条件下,在各类样品中均观察到能量为E_c-0.37eV和E_c-0.62eV两个浓度居统治地位的新的电子陷阱能级.从实验上证明了以上两个能级确是由进入硅点阵中的钯杂质所引起,并确定了它们和文献报道过的Si:Pd 能级间的相互转化关系.由这些能级的产生条件,退火特性以及电学测量结果来看,这两个新能级应分别与硅中间隙钯所引起的两种不同荷电态的施主中心相对应.更多还原

【Abstract】 The Pd-doped p~+nn~+-and n~+pp~+-Si diodes have been prepared by means of diffusionwith three kinds of Pd dopant, and have been,measured by deep level transient spectroscopy (DLTS).Under appropriate technological conditions two new dominant electron traplevels are observed in all the samples.It is proved by experiment that the two levels areundoubtedly attributed to Pd-impurity in the lattice of silicon,and that they have a certainmutual transferable relationship with other Si:Pd levels reported by the other authors.Ta-king into consideration the generation,the annealing behaviors and the electric characteris-tics of these two new levels,we suggest that they should be corresponding respectively tothe two different charged states of a donor centre due to the interstitial Pd levels in silicon.更多还原