【摘要】 MBE GaAs单晶薄膜的载流子浓度（1.8-8）×10¹⁶cm^-3,室温迁移率 3000-5000cm²/V.3最高达5466cm²/V.s,相应的77K迁移率为1.59 ×10⁴cm²/V.s.对高杂质浓度的外延层进行了阴极荧光（4.2K） 和SIMS 测量分析.更多还原

【Abstract】 GaAs films have been prepared by molecular beam epitaxy.Undoped MBE GaAs isn-type with net carrier concentration （1.8-8）×10¹⁶ cm^-3 and mobility 3000-5000 cm²/V·s at room temperature.Its highest mobility is 5466 cm²/V·s (n=1.93×10¹⁶cm^-3 witha corresponding mobility 1.59×10⁴ cm²/V·s at 77K.Properties of high impurity level filmshave been studied with cathodoluminescence and SIMS.更多还原