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衬底错向对LPE-GaAs表面形貌的影响

Effect of Substrate Misorientation on Surface Morphology of LPE-GaAs

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【作者】 周伯骏; 蒋四南; 高维滨; 方兆强; 向贤碧; 朱素珍; 王玉田; 吴让元;

【Author】 Zhou Bojun/Institute of Semiconductors, Academia SinicaJiang Sinan/Institute of Semiconductors, Academia SinicaGao Weibin/Institute of Semiconductors, Academia SinicaFang Zhaoqiang/Institute of Semiconductors, Academia SinicaXiang Xianbi/Institute of Semiconductors, Academia SinicaZhu Suzhen/Institute of Semiconductors, Academia SinicaWang Yutian/Institute of Semiconductors, Academia SinicaWu Rangyuan/Institute of Semiconductors, Academia Sinica

【机构】 中国科学院半导体研究所; 中国科学院半导体研究所;

【摘要】 本文研究了与(100)晶面错向的衬底上砷化镓液相外延层的表面形貌.随着外延层厚度的增加,先后观察到了鳞片状结构、水波纹结构和平行阶梯结构.本文对这形貌变化的机构作了讨论.我们还看到当外延层厚度是 2.1—2.2μm时,只有错向<4'表面才光亮平整.当外延层厚到2.5-3μm时,错向<5'即可获得光亮的表面.

【Abstract】 The surface morphology of GaAs LPE layers grown on substrates misoriented from the(100) plane has been studied.With the increasing of the thickness of epitaxial layers,scales,ripples and terraces are observed successively.The mechanism of the change of the morpho-logy has been discussed.It is found that,when the thickness of LPE layers is 2.1-2.2μm,smooth planar surfaces can be obtained only if the misorientation θ<4’,and when the thic-kness is 2.5-3μm,smooth surfaces can also be obtained on substrates if the misorientionθ<5’.

  • 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1984年02期
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