【摘要】 研究了高压液封直拉InP 单晶在 4.2 K、1.8K和 4.2至～40K三种温区的光致发光谱.除看到了1.416eV处的近带边峰和1.1-1.2eV处与P空位有关的络合物峰外,还观察到1.377eV(A峰)和1.368eV处(B峰)的两个峰及它们在低能方向的一级、二级、三级声子伴线.初步确定A峰、B峰分别与受主杂质Zn、Cd有关.实验测定了InP中纵向光学声子(Lo)的能量约为43meV,并给出了电子、声子耦合强度s值.更多还原

【Abstract】 Photoluminescence spectra of LEC-InP are investigated at 1.8K,4.2K,and between4.2K and 40K.Besides the near bandedge emission at～1.416 eV and a broad band associ-ated with P vacancy-impurity complex in the range of 1.1-1.2 eV,the emission peaks at1.377 eV (peak A) and at 1.368 eV (peak B) and their first,second and third phonon rep-licas at lower energy range are observed.Peak A and peak B are attributed to acceptor Znand Cd respectively.The energy of longitudial optical phonon measured in InP is about 43meV,and the electron-phonon coupling strength S is also given.更多还原