【摘要】 本文探讨了Ⅳ族代位式杂质在硅、锗单晶中的晶格动力学问题.引用“局域有效电荷模型”得到三个主要模型参量,结合W.Weber的“绝热键电荷模型”所得到的硅、锗单晶的声子态密度数据,分别计算了Ⅳ族代位杂质在硅、锗单晶中所产生的局域模及带内模频率和红外吸收系数.理论计算结果与已有实验结果符合较好,同时予示了一些目前实验尚未测得的结果,进一步证明所提出模型的合理性.更多还原

【Abstract】 A theoretical study of the local modes and infrared absorption have been undertakenon the lattice dynamics of the group IV substitutional impurities in silicon and germanium.The calculations are based on the phonon densities of states from an adiabatic bond-chargemodel and three main model parameters from the local effective charge model.The resultsagree reasonably well with the experimental values for Si:C,Ge:Si and Si:Ge.The expectedvalues for the others are listed.更多还原