【摘要】 研究了InP、InGaAsP材料在质子轰击前后的光吸收特性和荧光特性,观察了热处理对这些光学特性的影响.用扫描电镜观察了DH片子解理面上质子轰击区的形貌,由此确定了一定加速能量下的轰击深度和电极金属层的阻挡能力.分析比较了不同的质子轰击深度对激光器伏-安特性和激射特性的影响,发现在最佳的轰击条件下才能得到阈值低、效率较高,功率-电流曲线的扭折点较高,光谱比较单纯的激光器.更多还原

【Abstract】 The optical absorption and photoluminescence properties of the InP,InGaAsp mate-rials before and after the proton bombardment as well as the effect of heat treatment on theseproperties are investigated.By examining the topography of the cleaved face of the protonbombarded DH wafer with SEM,the blocking ability of the contact metal layer and protonpenetrotion depth under certain proton energy are estimated.The effect of the bombardme-nt depth on the I-V and lasing characteristics of the lasers is studied and it is found that la-sers which are of low threshold,high quantum efficiency,higher kink point in the output-current characteristics and nearly single longitudinal mode can be attained under optimumbombardment conditions.更多还原