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氧离子注入对铝膜导电性能的影响

THE EFFECT OF OXYGEN IONS IMPLANTATION ON THE CONDUCTIVITY OF ALUMINUM THIN FILM

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【作者】 孙树滋; 廖蔚树; 李杰; 杨淑文; 肖群峰; 郑全录; 于志伟;

【Author】 Sun Shu-zi Liao Wei-shu Li Jie Yang Shu-wen Xiao Qun-feng Zheng Quan-lu Yu Zhi-wei Northeast Institute of Technology

【机构】 东北工学院; 东北工学院;

【摘要】 <正> 众所周知,离子注入能够的改变固体表面的物理、化学、机械等性质。例如,改变金属的导电及摩擦性质,改变光学材料的折射率。我们把离子注入技术和真空镀膜技术结合起来,在蒸发薄膜中,注入各种不同的离子,来改变薄膜组分、结构和性质,以期制取各种不同性质的薄膜。一、实验步骤

【Abstract】 The effect of oxygen ions implantated on the conductivity of aluminum thin film was stu- died. Experimental results show that the resistivity of aluminum film increases with the quan- tity of Oxygen ions implanted. There are, however, there case in the change of resistivity. First, when Oxygen ions impanted below 3×1016ions/cm2 there was almost no change in the resistivity of the film. Second, as Oxygen implanted above 3×1016ions/cm2 the resistivity was remarkably encreased. Again, when implanted quamtity was 6.7×1016ions/cm2 the rsistivity rose more rapidly, and elvated by twelve in the order of magnitude.It is Shown by using TEM and ESCA analysis that the f.c.c structure of the polyarystal aluminum film changed to the non-crystal structure of Al2O3. at high quantities. implanted.And it may be the reason of the conductivity change of aluminum film due to oxygen ion implanted,

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