【摘要】 用离子注入技术对磷砷化镓进行了掺氮,给出了组分在0.175≤x≤<0.8间氮能级随组分变化的方程式为E_N_x=1.694+0.524x-0.020x~2.利用测得的光致发光谱线算得的(?)为参数对组分x作图,可求得在本实验条件下能够存在氮等电子陷阱的极限组分x≈0.166.对磷砷化镓掺氮及氧的研究结果表明,氮和氧可在磷砷化镓中引进一系列深能级电子陷阱,它们的形成与掺杂次序无关.更多还原

【Abstract】 The ion-implantation technique was used for introducing nitrogen into GaAs1-xPx with or without oxygen. The dependence of nitrogen energy levels of close-spaced epitaxially grown GaAs1-xPx (with oxygon) on composition can be represented by an "abnormal" curve as compared with data reported in the literature. The relationship between composition X and nitrogen energy levels in VPE GaAs1-xPx (without oxygen) grown under phosphorous pressures can be expressed asENx = 1.694+0.524x+0.020x2 within the range of 0.175≤x≤0.8.From the dependence of the ratio IENx/IEj on composition X, it has been shown that the lower the x, the smaller the ratio, and the curve is shown to intersect the abscissa at x≈0.166 by extrapolating the Said ratio to zero. This method can accordingly be used to determine the composition limit where the nitrogen iso-electronio trap no longer exists under the present experimental conditions.It ia concluded that oxygen and nitrogen can induce a number of deep levels in epitaxial GaAs1-xPx prepared by two methods mentioned above.更多还原