【摘要】 对沿<100>方向生长的p型和沿<111>方向生长的n型宏观无位错直拉硅单晶,用铜缀饰X射线形貌术和腐蚀法观察到两种不同类型的微缺陷,对n型硅单晶还观察到一种特殊组态的微缺陷。对观察到的微缺陷的分布、组态进行了初步的分析。 本文首次采用X射线透射投影和截面形貌术对硅单晶原生微缺陷进行直接观察,获得了相应的微缺陷图。所观察到的微缺陷的组态、尺度、分布等与铜缀饰X射线透射形貌图所示结果一致。更多还原

【Abstract】 Two different type of microdefects have been observed by means of Cu-decorating X-ray topography and etching method in p-type silicon single crystal grown along <100> and/or n-type ones grown along <111> direction. A kind of defects with special configuration has also been found in n-type silicon single crystal. The distribution and configuration of these defects are discussed preliminarily.It was the first time to investigate the "as grown" microdefects in silicon single crystal grown by Czochraski method directly by means of X-ray transmission projection and/or section topography. X-ray topographs of microdefects in CZ silicon crystal were obtained. The configuration, size and distribution of the microdefects observed were in agreement with that obtained by Cu-decorating X-ray topography quite well.更多还原